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LK-AMPD-D High Speed Amplified Microwave InGaAs Photodetector
- High Speed，Wide Bandwidth
- Incorporated Bias-T
- O/E Hybrid Integrated
- High Gain, Low Noise, Broadband
- Hermetically Sealed, SMA Connector
- Low Dark Current，high signal-to-noise ratio.
- Small Form Factor.
Description
LK-AMPD-D is a fusion of optical and electronic components, featuring a wide-spectrum InGaAs photodiode and a minimal-noise amplifier. The InGaAs PIN photodiode has a sensitivity range from 1000 to 1650nm. The low-noise amplifier boasts an RF gain of 30dB.
LK-AMPD-D is capable of delivering bandwidths of either 12GHz or 20GHz. This device functions with a +9V power supply. It is designed to work with the standard single-mode 9/125μm fiber as input. The RF output features an SMA-type connector that is impedance-matched to 50 ohms.
LK-AMPD-D is sealed in a way that prevents the ingress of moisture and other contaminants, and it has a weight of less than 23 grams. It is certified to meet the requirements of the Restriction of Hazardous Substances (RoHS) Directive 2.0.
Specifications
| Typical & Absolute Maximum Rating | ||||
|---|---|---|---|---|
| Parameter | Sym. | Typ | Rating | Unit |
| Storage temperature range | TSTG | -45 ～ +85 | -55 ～ +100 | ℃ |
| Operating case temperature range | TC | 25 | -40 ～ +85 | ℃ |
| Bias Voltage | VR | +9 | +9 ～ +12 | V |
| Optical Input Power | Pin | 0 | +10 | dBm |
| Burn-out Optical Power | PB | - | +13 | dBm |
| Lead soldering temperature | Tp | 280（10s） | 330（10s） | ℃ |
| Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ ) | ||||||
|---|---|---|---|---|---|---|
| Parameter | Sym | Test Condition | Parameter Values | Unit | ||
| Wavelength Range | λ | － | 1000 ～ 1650 | nm | ||
| Frequency Range | － | － | X - Band | Ku - Band | － | |
| Small Signal Bandwidth | f-3dB | TC = 22 ± 3℃ | 0. 3 ～ 12 | 2 ～ 20 | GHz | |
| Responsivity | Re | VR =+9V, Pin =10mW | λ = 1310 nm | ≥ 0.8 | ≥ 0.85 | A/W |
| λ = 1550 nm | ≥ 0.85 | ≥ 0.8 | ||||
| Amplitude Flatness | A | TC =-45～+85 ℃ | ≤ ± 2 | dB | ||
| Saturation Optical Power | Ps | VR = +9 V, λ = 1550 nm AC Modulated | +10 | dBm | ||
| RF Signal Gain | G | － | 30 ± 1 | dB | ||
| Saturation RF Output Power | Pout | － | +10 | dBm | ||
| Output VSWR | VSWR | － | ≤ 2 | － | ||
| Output Impedance | RL | － | 50 | Ω | ||
●Typical Response Curves
（ Fig . 1 X- Band Photodetector Frequency Response）
（ Fig . 2 Ku - Band Photodetector Frequency Response）
●Dimension and Pins ( Unit: mm[inch] )
RF Connector：SMA
●Ordering Information
Sheet 1：
| Code | RF Signal Gain | Remark |
| D | 30 dB | Typical & Center Frequency |
Sheet 2：
| Code | Analog Bandwidth |
| X | 0. 3 ～ 12 GHz |
| Ku | 2 ～ 20 GHz |
Sheet 3：
| Code | Connector Type | Remark |
| N | No Connector | Single-mode 9 / 125 μm fiber pigtail |
| A | FC / APC | |
| P | FC / PC |
●Precautions
The fiber bending radius no less than 20 mm for avoiding fiber damaged .
Be sure the fiber coupling facet is clean before connecting it to opto-circuit .
The suitable ESD protection is required in storage, transportation and using .
All of our standard photodetectors can be customized into modules！
Applications
Radar Information Processing
Electronic Warfare
Antenna Measurement
Fiber Optic Communications
Security and Surveillance
