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LK-FCAMPD Amplified RF InGaAs Photodetector
- Wide Bandwidth
- Incorporated Bias-T
- O/E Hybrid Integrated
- High Gain, Low Noise, Broadband
- SMA Connector
- Low Dark Current, High signal-to-noise ratio
- Small Form Factor.
Description
LK-FCAMPD is a fusion of optical and electronic technology, integrating a broadband InGaAs photodiode with a low-noise amplifier. This device is sensitive to wavelengths between 1000 and 1650nm, thanks to its InGaAs PIN photodiode, and the low-noise amplifier provides an RF gain ranging from 20 to 30dB.
LK-FCAMPD offers configurable bandwidth options, including 1 gigahertz, 2.5 gigahertz, and customizable bandwidths up to a maximum of 5 gigahertz. The device operates on a +5-volt power supply and features a standard FC (face-contacted) fiber-optic connector for optical input. The RF output is facilitated through an SMA-compatible connector, which is impedance-matched to 50 ohms.
LK-FCAMPD is lightweight, with a mass of less than 25 grams, making it suitable for various portable and compact applications. It is certified to comply with the Restriction of Hazardous Substances (RoHS) Directive 2.0, indicating its commitment to environmental and safety standards.
Specifications
| Typical & Absolute Maximum Rating | ||||
|---|---|---|---|---|
| Parameter | Sym. | Typ | Rating | Unit |
| Storage temperature range | TSTG | -45 ～ +85 | -55 ～ +100 | ℃ |
| Operating case temperature range | TC | 25 | -40 ～ +70 | ℃ |
| Bias Voltage | VR | +5 | +4.75 ～ +5.25 | V |
| Optical Input Power | Pin | 0 | +5 | dBm |
| Burn-out Optical Power | PB | - | +13 | dBm |
| Lead soldering temperature | Tp | 280（10s） | 330（10s） | ℃ |
| Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ ) | |||||||
|---|---|---|---|---|---|---|---|
| Parameter | Sym | Test Condition | Parameter Values | Unit | |||
| Wavelength Range | λ | － | 1000 ～ 1650 | nm | |||
| Frequency Range | － | － | L - Band | S - Band | CM | － | |
| Small Signal Bandwidth | f-3dB | TC = 22 ± 3℃ | 0.03～1 | 0.03～2.5 | 0.1～5 | GHz | |
| Responsivity | Re | VR =+5V, Pin =1mW | λ = 1310 nm | ≥ 0.85 | ≥ 0.90 | ≥ 0.90 | A/W |
| λ = 1550 nm | ≥ 0.90 | ≥ 0.90 | ≥ 0.90 | ||||
| RF Signal Gain | G | － | 30 ±2 | 20 ±2 | 20 ±2 | dB | |
| Amplitude Flatness | A | TC =-40～+70 ℃ | ≤ ± 1.5 | ≤ ± 1.5 | ≤ ± 2 | dB | |
| Output VSWR | VSWR | － | ≤ 2 | ≤ 2 | ≤ ± 2.2 | － | |
| Saturation Optical Power | Ps | VR = +5 V, λ = 1550 nm AC Modulated | +5 | dBm | |||
| Saturation RF Output Power | Pout | － | 15 | dBm | |||
| Dark Current | ID | － | ≤10 | nA | |||
| Output Impedance | RL | － | 50 | Ω | |||
● Typical Response Curves
（ Fig . 1 L- Band FCAMPD InGaAs Photodetector Frequency Response）
（ Fig . 2 S- Band FCAMPD InGaAs Photodetector Frequency Response）
（ Fig . 3 C- Band FCAMPD InGaAs Photodetector Frequency Response）
● Dimension and Pins ( Unit: mm[inch] )
Optical Connector：FC(face-contacted) fiber-optic connector
RF Connector：SMA
● Ordering Information
Sheet 1：
| Code | Analog Bandwidth |
| L | 0.03 ～ 1 GHz |
| S | 0.03 ～ 2.5 GHz |
| CM | Customization ( ≦ 5GHz ) |
● Precautions
Be sure the fiber coupling facet is clean before connecting it to opto-circuit .
RF interface and optical interface shall be covered with dust cap when not in use.
The suitable ESD protection is required in storage, transportation and using .
All of our standard photodetectors can be customized into modules！
Applications
Radar Information Processing
Electronic Warfare
Antenna Measurement
Fiber Optic Communications
Security and Surveillance
